Improved Ultrahigh Upper Gate 4H-SiC MESFET with Serpentine Channel Structure

Enhanced Drain Current of 4H-SiC MOSFETs by Adopting a Three-Dimensional Gate Structure

4H-SiC (0001) metal–oxide–semiconductor fieldeffect transistors (MOSFETs) with a 3-D gate structure, which has a top channel on the (0001) face and side-wall channels on the {112̄0} face, have been fabricated. The 3-D gate structures with a 1–5-μm width and a 0.8-μm height have been formed by reactive ion etching, and the gate oxide has been deposited by plasma-enhanced chemical vapor deposition...

Conductance Deep-Level Transient Spectroscopic Study of 4H-SiC MESFET and Traps

A novel SiC MESFET with recessed P-Buffer layer

We report, for the first time, a silicon carbide (SiC) based metal semiconductor field effect transistor (MESFET) which has a recessed p-buffer layer into the channel region near the source and a recessed channel into the p-buffer layer region near the drain under the gate. The length and thickness of the channel recess into the p-buffer layer are larger than the pbuffer recess into the channel...

Failure analysis of ESD-stressed SiC MESFET

a CNRS, LAAS, 7 Avenue du Colonel Roche, F-31400 Toulouse, France b Univ de Toulouse, UPS, LAAS, F-31400 Toulouse, France c Université de Lyon, CNRS, Laboratoire AMPERE, UMR 5005, INSA de Lyon, F-69621 Villeurbanne, France d Institut de Microelectrónica de Barcelona-Centre Nacional de Microelectrónica (IMB-CNM), Consejo Superior de Investigaciones Científicas (CSIC), Universitat Autònoma de Bar...

Electronic structure and charge transfer in 3C- and 4H-SiC

We utilized a local density functional potential, the linear combination of atomic orbital (LCAO) method, and the BZW procedure to study the electronic structure of 3Cand 4H-SiC. We present the calculated energy bands, band-gaps, effective masses of n-type carriers, and critical point transition energies. There is good agreement between the calculated electronic properties and experimental resu...